VS-HFA15TB60SPBF, vs-hfa15tb60-1pbf www.vishay.com vishay semiconductors revision: 29-feb-16 1 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? , ultrafast soft recovery diode, 15 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? designed and qualified for industrial level ? aec-q101 qualified ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description VS-HFA15TB60SPBF, vs-hfa15tb60-1pbf is a state of the art ultrafast recovery diod e. employing the latest in epitaxial construction and advanced processing techniques it features a superb combinati on of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 600 v and 15 a continuous current, the VS-HFA15TB60SPBF, vs-hfa15tb60-1pbf is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfre d features combine to offer designers a rectifier with lowe r noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snu bbing, component count and heatsink sizes. the hexfred VS-HFA15TB60SPBF, vs-hfa15tb60-1pbf is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and ma ny other similar applications where high speed, high efficiency is needed. product summary package to-263ab (d 2 pak), to-262aa i f(av) 15 a v r 600 v v f at i f 1.2 v t rr (typ.) 23 ns t j max. 150 c diode variation single die to-262aa to-263ab (d 2 pak) ba s e cathode anode 1 3 2 n/c n/c anode 1 3 2 v s -hfa15 tb60 s p b fv s -hfa15 tb60-1p b f absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current i f t c = 100 c 15 a single pulse forward current i fsm 150 maximum repetitive forward current i frm 60 maximum power dissipation p d t c = 25 c 74 w t c = 100 c 29 operating junction and storage temperature range t j , t stg -55 to +150 c
VS-HFA15TB60SPBF, vs-hfa15tb60-1pbf www.vishay.com vishay semiconductors revision: 29-feb-16 2 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode ? breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 15 a see fig. 1 -1.31.7 i f = 30 a - 1.5 2.0 i f = 15 a, t j = 125 c - 1.2 1.6 maximum reverse ? leakage current i rm v r = v r rated t j = 125 c, v r = 0.8 x v r rated see fig. 2 -1.010 a - 400 1000 junction capacitance c t v r = 200 v see fig. 3 - 25 50 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time ? see fig. 5 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 23 - ns t rr1 t j = 25 c i f = 15 a ? di f /dt = 200 a/s ? v r = 200 v -5060 t rr2 t j = 125 c - 105 120 peak recovery current ? see fig. 6 i rrm1 t j = 25 c - 4.5 6.0 a i rrm2 t j = 125 c - 6.5 10 reverse recovery charge ? see fig. 7 q rr1 t j = 25 c - 84 180 nc q rr2 t j = 125 c - 241 600 peak rate of fa ll of recovery ? current during t b ? see fig. 8 di (rec)m /dt1 t j = 25 c - 188 - a/s di (rec)m /dt2 t j = 125 c - 160 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, ? junction to case r thjc --1.7 k/w thermal resistance, ? junction to ambient r thja typical socket mount - - 80 thermal resistance, ? case to heatsink r thcs mounting surface, flat, smooth and greased - 0.5 - weight -2.0- g -0.07- oz. marking device case style d 2 pak hfa15tb60s case style to-262 hfa15tb60-1
VS-HFA15TB60SPBF, vs-hfa15tb60-1pbf www.vishay.com vishay semiconductors revision: 29-feb-16 3 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 150 c t j = 125 c t j = 25 c 1.0 2.4 1.2 1.4 v fm - forwar d voltage drop (v) i f - instantaneous forwar d current (a) 100 1.8 2.2 2.0 1.6 0.01 0.1 1 10 100 0 v r - reverse voltage (v) i r - reverse current (a) t j = 125 c t j = 25 c 1000 100 600 500 300 10 000 t j = 150 c 400 200 10 100 10 100 1000 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response s ingle pul s e (thermal re s pon s e) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 p dm t 2 t 1 note s : 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
VS-HFA15TB60SPBF, vs-hfa15tb60-1pbf www.vishay.com vishay semiconductors revision: 29-feb-16 4 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt 80 40 0 100 1000 d i f / d t (a/s) t rr (ns) v r = 200 v t j = 125 c t j = 25 c 60 20 i f = 30 a i f = 15 a i f = 5 a 100 20 15 0 100 1000 d i f / d t (a/s) i rr (a) v r = 200 v t j = 125 c t j = 25 c 5 10 25 i f = 30 a i f = 15 a i f = 5 a 800 0 100 1000 d i f / d t (a/s) q rr (nc) 600 200 400 100 300 500 700 i f = 30 a i f = 15 a i f = 5 a v r = 200 v t j = 125 c t j = 25 c 10 000 1000 100 1000 d i f / d t (a/s) d i (rec)m / d t (a/s) v r = 200 v t j = 125 c t j = 25 c 100 i f = 30 a i f = 15 a i f = 5 a
VS-HFA15TB60SPBF, vs-hfa15tb60-1pbf www.vishay.com vishay semiconductors revision: 29-feb-16 5 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA15TB60SPBF, vs-hfa15tb60-1pbf www.vishay.com vishay semiconductors revision: 29-feb-16 6 document number: 94054 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per tube or tape and reel minimum order quantity packaging description VS-HFA15TB60SPBF 50 1000 antistatic plastic tube vs-hfa15tb60strlp 800 800 13" diameter reel vs-hfa15tb60strrp 800 800 13" diameter reel vs-hfa15tb60-1pbf 50 1000 antistatic plastic tube links to related documents dimensions to-263ab (d 2 pak): www.vishay.com/doc?95046 to-262aa: www.vishay.com/doc?95419 part marking information to-263ab (d 2 pak): www.vishay.com/doc?95054 to-262aa: www.vishay.com/doc?95420 packaging information www.vishay.com/doc?95032 spice model www.vishay.com/doc?95357 2 - hexfred ? family 1 - vishay semiconductors product 3 - electron irradiated 4 - current rating (15 = 15 a) 5 - package: tb = to-220 6 - voltage rating (60 = 600 v) 7 - s = d 2 pak - -1 = to-262 9 8 - none = tube (50 pieces) trl = tape and reel (left oriented, for d 2 pak package ) trr = tape and reel (right oriented, for d 2 pak package ) device code 5 1 3 2 4 6 7 8 9 vs- hf a 15 tb 60 s trl pbf - ? pbf = lead (pb)-free, for tube packaged ? p = lead (pb)-free, for tape and reel packaged
outline dimensions www.vishay.com vishay semiconductors revision: 08-jul-15 1 document number: 95046 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5 m-1994 (2) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be dete rmined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec ? outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec ? outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b m m (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096)
document number: 95419 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-262 outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") pe r side. these di mensions are measured at the outmost e xtremes of th e plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) controlling dime nsion: inches (6) outline conform to jedec to- 262 except a1 (maximum), b (minimum) and d1 (minimum) where dimensions derived the actual package outline symbol millimeters inches notes min. max. min. max. a 4.06 4.83 0.160 0.190 a1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 d 8.51 9.65 0.335 0.380 2 d1 6.86 8.00 0.270 0.315 3 e 9.65 10.67 0.380 0.420 2, 3 e1 7.90 8.80 0.311 0.346 3 e 2.54 bsc 0.100 bsc l 13.46 14.10 0.530 0.555 l1 - 1.65 - 0.065 3 l2 3.56 3.71 0.140 0.146 (4) (4) base metal plating b1, b3 (b, b2) c1 c section b - b and c - c scale: none section a - a (3) e1 (3) d1 e b a a a c2 c a1 seating plane lead tip (3) (2) (3) (2) a e (datum a) l1 l2 b b c c 3 2 1 l d 2 x e 3 x b2 3 x b 0.010 a b mm modified jedec outline to-262 lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
